Semiconductor device with front and back side resin layers having different thermal expansion coefficient and elasticity modulus

ABSTRACT

Disclosed are a semiconductor device wherein warping of a semiconductor chip due to a sudden temperature change can be prevented without increasing the thickness, and a semiconductor device assembly. The semiconductor device comprises a semiconductor chip, a front side resin layer formed on the front surface of the semiconductor chip by using a first resin material, and a back side resin layer formed on the back surface of the semiconductor chip by using a second resin material having a higher thermal expansion coefficient than the first resin material. The back side resin layer is formed thinner than the front side resin layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of application Ser. No. 11/988,030,filed on Dec. 28, 2007. Furthermore, this application claims the benefitof priority of Japanese applications 2005-189571 and 2005-189572 filedon Jun. 29, 2005. The disclosures of these prior U.S. and Japaneseapplications are incorporated herein by reference.

TECHNICAL FIELD

The present invention relates to a semiconductor device and asemiconductor device assembly in a wafer state before being cut intopieces of semiconductor devices.

BACKGROUND ART

Recently, a WL-CSP (Wafer Level-Chip Size Package) which realizesdownsizing, higher functionality, and higher performance ofsemiconductor devices has been put to practical use. Concerning theWL-CSP, the packaging process is completed in the wafer state, andindividual chip sizes cut out by dicing become package sizes.

That is, in the manufacturing processes for a semiconductor deviceemploying the WL-CSP, on the surface of a wafer in which a plurality ofsemiconductor chips are formed, a polyimide layer and rewiring areformed, and thereafter, a front side resin layer for sealing these isformed. After external terminals are formed on the front side resinlayer, semiconductor devices of a WL-CSP having the same package size asthat of the semiconductor chip are obtained by cutting (dicing) thewafer together with a passivation film and the sealing resin alongdicing lines set between the respective semiconductor chips.

-   Patent document 1: Japanese Unexamined Patent Publication No.    2003-60119-   Patent document 2: Japanese Unexamined Patent Publication No.    2004-336020

DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention

The front side resin layer is formed by applying a resin as a materialof the front side resin layer onto the surface of a wafer and curing theresin on the surface of the wafer by temporarily heating and thencooling it. At this time, the resin on the surface of the waferthermally shrinks. When such thermal shrinkage occurs, a stress isapplied onto the surface of the wafer, so that the wafer warps, and as aresult, function elements inside the wafer may be damaged.

In order to prevent such a warping of the wafer, it is conceivable thata back side resin layer which is made of the same material and has thesame thickness as those of the front side resin layer is formed on theback surface of the wafer. Thereby, when the resins are cooled forcuring after heating, the resins on the front surface and the backsurface of the wafer thermally shrink in the same manner, so that thewafer can be prevented from warping.

However, when the back side resin layer with the same thickness as thatof the front side resin layer is formed on the back surface of thewafer, the thickness of a semiconductor device which is obtained bycutting the wafer becomes great.

In addition, there is provided such a semiconductor device including amanufacturer name and a product number marked on the surface of the backside resin layer. As a method for marking the manufacturer name, etc.,on the surface of the back side resin layer, for example, lasermachining is conceivable. That is, it is possible that a laser beam isirradiated onto the surface of the back side resin layer to form fineconcave grooves, thereby the manufacturer name, etc., can be engraved onthe surface of the back side resin layer.

However, when the manufacturer name, etc., is engraved on the surface ofthe back side resin layer by means of laser machining, if the back sideresin layer is made only of a resin material, due to the luster of thesurface of the back side resin layer, it is difficult to visually checkthe manufacturer name, etc. In order to solve this problem, filler ismixed in the resin material forming the back side resin layer to reducethe luster of the surface of the back side resin layer.

However, if the amount of filler mixed in the resin material is large,the surface of the back side resin layer becomes comparatively greatlyuneven due to the filler. Therefore, it becomes difficult to distinguishthe concave grooves showing the manufacturer name, etc., engraved on thesurface of the back side resin layer from the unevenness due to thefiller, and if anything, the visibility deteriorates.

Therefore, a first object of the present invention is to provide asemiconductor device which can prevent warping of a semiconductor chipdue to a sudden temperature change without an increase in thickness.

A second object of the present invention is to provide a semiconductordevice assembly which can prevent warping of a substrate due to a suddentemperature change without an increase in thickness of the semiconductordevice.

A third object of the present invention is to provide a semiconductordevice which can improve the visibility of the manufacturer name, etc.,engraved on the surface of the back side resin layer by means of lasermachining.

Means for Solving the Problems

A semiconductor device of the present invention for achieving the firstobject includes a semiconductor chip, a front side resin layer formed onthe front surface of the semiconductor chip by using a first resinmaterial, and a back side resin layer formed to be thinner than thefront side resin layer on the back surface of the semiconductor chip byusing a second resin material having a higher thermal expansioncoefficient than that of the first resin material.

According to this construction, a front side resin layer is formed onthe front surface side of a semiconductor chip by using a first resinmaterial, and on the back surface side thereof, a back side resin layerthinner than the front side resin layer is formed by using a secondresin material having a thermal expansion coefficient higher than thatof the first resin material. By forming the back side resin layer to bethinner than the front side resin layer, the thickness of thesemiconductor device can be made smaller than in the case where resinlayers with the same thickness are formed on the front surface side andthe back surface side of a semiconductor chip. Although the back sideresin layer is thinner than the front side resin layer, by using thesecond resin material having a thermal expansion coefficient higher thanthat of the first resin material forming the front side resin layer asthe material of the back side resin layer, when the surface side resinlayer and the back side resin layer thermally expand or thermally shrinkaccording to a sudden temperature change, a stress applied to the backsurface of the semiconductor chip from the back side resin layer can bemade generally equal to a stress applied to the front surface of thesemiconductor chip from the front side resin layer. Therefore, while thethickness of the semiconductor device can be prevented from increasing,warping of the semiconductor chip due to a sudden temperature change canalso be prevented.

It is preferable that the second resin material has an elasticitymodulus smaller than that of the first resin material. A second resinmaterial having a small elasticity modulus is used as the material ofthe back side resin layer, so that although the back side resin layer isformed to be thin, the impact applied to the back side resin layer canbe sufficiently absorbed, and the semiconductor chip can be sufficientlyprotected.

For example, when the first resin material is a bisphenol-A type epoxyresin and the second resin material is polyimideamide, the thermalexpansion coefficient of the second resin material is higher than thatof the first resin material, and the elasticity modulus of the secondresin material is smaller than that of the first resin material.

The semiconductor device may further include external terminals whichare arranged on the front side resin layer and come into contact withelectrodes on a mounting substrate when the semiconductor device ismounted on the mounting substrate.

A semiconductor device assembly of the present invention for achievingthe second object includes a substrate in which a plurality ofsemiconductor chips are formed, a front side resin layer formed by usinga first resin material on the front surface of the substrate, and a backside resin layer formed to be thinner than the front side resin layer onthe back surface of the substrate by using a second resin materialhaving a thermal expansion coefficient higher than that of the firstresin material.

According to this construction, on the front surface side of asubstrate, a front side resin layer is formed by using a first resinmaterial, and on the back surface side thereof, a back side resin layerthinner than the front side resin layer is formed by using a secondresin material having a thermal expansion coefficient higher than thatof the first resin material. By forming the back side resin layer to bethinner than the front side resin layer, the thickness of asemiconductor device obtained by cutting the semiconductor deviceassembly can be made smaller than in the case where resin layers withthe same thickness are formed on the front surface side and the backsurface side of the substrate. Although the back side resin layer isthinner than the front side resin layer, by using the second resinmaterial having a thermal expansion coefficient higher than that of thefirst resin material forming the front side resin layer as the materialof the back side resin layer, when the materials of the front side resinlayer and the back side resin layer are cooled for curing after heatingand the materials thermally shrink, a stress applied to the back surfaceof the substrate can be made generally equal to a stress applied to thefront surface of the substrate. Therefore, while the thickness of thesemiconductor device obtained from the semiconductor device assembly canbe prevented from increasing, warping of the substrate can also beprevented.

It is preferable that the second resin material has an elasticitymodulus smaller than that of the first resin material. As a material ofthe back side resin layer, the second resin material having a smallelasticity modulus is used, so that although the back side resin layeris formed to be thin, an impact applied to the back side resin layer canbe sufficiently absorbed. Therefore, in the state of a semiconductordevice assembly, each semiconductor chip can be sufficiently protected,and in a semiconductor device obtained from the semiconductor deviceassembly, a semiconductor chip can be sufficiently protected.

For example, when the first resin material is a bisphenol-A type epoxyresin and the second resin material is polyimideamide, the thermalexpansion coefficient of the second resin material is higher than thatof the first resin material, and the elasticity modulus of the secondresin material is smaller than that of the first resin material.

A semiconductor device of the present invention for achieving the thirdobject includes a semiconductor chip, and a back side resin layer formedon the back surface of the semiconductor chip by using a resin material,wherein the resin material is obtained by mixing filler in a range notless than 5 weight percent and not more than 10 weight percent in theresin.

With this construction, a resin material forming a back side resin layercontains filler mixed in a range not less than 5 weight percent and notmore than 10 weight percent in the resin. Thereby, while the luster onthe surface of the back side resin layer can be reduced, greatunevenness of the surface of the back side resin layer due to the fillercan be prevented. Therefore, the visibility of the manufacturer name,etc., engraved on the surface of the back side resin layer by lasermachining can be improved.

The semiconductor device may further include a front side resin layerformed on the front surface of the semiconductor chip and externalterminals which are provided on the front side resin layer and come intocontact with electrodes on a mounting substrate when the semiconductordevice is mounted on the mounting substrate.

The above-described or other objects, features, and effects of thepresent invention will be made apparent by the following description ofthe embodiments with reference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

[FIG. 1] A side view schematically showing a construction of asemiconductor device according to a first embodiment of the presentinvention;

[FIG. 2] A perspective view of a semiconductor device assembly formed ofan assembly of semiconductor devices shown in FIG. 1 observed from thesurface side;

[FIG. 3] A schematic side view of the semiconductor device assemblyshown in FIG. 2;

[FIG. 4] A side view schematically showing a construction of asemiconductor device according to a second embodiment of the presentinvention;

[FIG. 5] A perspective view of the semiconductor device of FIG. 4; and

[FIG. 6] A side view showing the surface of the back side resin layershown in FIG. 4 in an enlarged manner for describing a method formarking a manufacturer name and a product number, etc., on the surfaceof the back side resin layer.

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present invention will be described indetail with reference to the accompanying drawings.

FIG. 1 is a side view schematically showing a construction of asemiconductor device according to a first embodiment of the presentinvention.

This semiconductor device 1 is a semiconductor device employing a WL-CSP(Wafer Level-Chip Size Package). The semiconductor device 1 includes asemiconductor chip 10.

The semiconductor chip 10 has a thickness of, for example, 300 to 400μm. In the surface layer portion of this semiconductor chip 10, functionelements (not shown) are formed. A front surface 10 a of thesemiconductor chip 10 is covered by a passivation film (not shown). Onthe passivation film, a polyimide layer and rewiring (not shown) areformed. On the front surface 10 a of the semiconductor chip 10, a frontside resin layer 11 for sealing the rewiring, etc., is formed.

The front side resin layer 11 has a thickness of approximately 40 to 100μm. This front side resin layer 11 is made of, for example, abisphenol-A type epoxy resin which has an elasticity modulus of 16 GPa,a thermal expansion coefficient of 2.5 to 8.5 ppm/° C. at a temperaturelower than the glass transition point (135° C.), and a thermal expansioncoefficient of 19.0 to 44.0 ppm/° C. at a temperature not less than theglass transition point.

On the other hand, on the back surface 10 b of the semiconductor chip10, a back side resin layer 12 is formed by using a resin material whichhas a higher thermal expansion coefficient and a smaller elasticitymodulus than those of the bisphenol-A type epoxy resin as a material ofthe front side resin layer 11. As a resin material having these thermalexpansion coefficient and elasticity modulus, for example,polyimideamide having an elasticity modulus of 2.5 GPa and a thermalexpansion coefficient of 60.0 ppm/° C. can be included. The back sideresin layer 12 has a thickness of approximately 10 to 30 μm, and isformed to be thinner than the front side resin layer 11.

On the front side resin layer 11, a plurality of external terminals 13for connection to the mounting substrate 2 are provided. The pluralityof external terminals 13 are arranged in a lattice pattern at thecentral portion of the front side resin layer 11 side. Each externalterminal 13 is formed in a ball shape, and is electrically connected tothe semiconductor chip 10 of the semiconductor device 1. In thissemiconductor device 1, by bringing the external terminals 13 intocontact with respective lands 21 on a mounting substrate 2, mounting onthe mounting substrate 2 is realized.

Thus, by forming the back side resin layer 12 to be thinner than thefront side resin layer 11, the thickness of the semiconductor device canbe made smaller than in the case where resin layers with the samethickness are formed on the front surface 10 a side and the back surface10 b side of the semiconductor chip 10. Although the back side resinlayer 12 is thinner than the front side resin layer 11, by using, as thematerial of the back side resin layer 12, a resin material having athermal expansion coefficient higher than that of the resin materialforming the front side resin layer 11, when the front side resin layer11 and the back side resin layer 12 thermally expand or thermallyshrink, a stress applied to the back surface of the semiconductor chip10 from the back side resin layer 12 can be made generally equal to astress applied to the front surface of the semiconductor chip 10 fromthe front side resin layer 11. Therefore, while the thickness of thesemiconductor device 1 can be prevented from increasing, warping of thesemiconductor chip 10 due to a sudden temperature change can beprevented.

As the material of the back side resin layer 12, polyimideamide having acomparatively small elasticity modulus is used, so that although thebackside resin layer 12 is formed to be thin, an impact applied to theback side resin layer 12 can be sufficiently absorbed, and thesemiconductor chip 10 can be sufficiently protected.

FIG. 2 is a perspective view of a semiconductor device assembly 3 formedof an assembly of the semiconductor devices 1 shown in FIG. 1 observedfrom a front surface 30 a side, and FIG. 3 is a schematic side view ofthe same.

The semiconductor device 1 is obtained by cutting the semiconductordevice assembly 3 formed of an assembly of a plurality of thesemiconductor devices 1 with a dicing blade, etc., (not shown) alongdicing lines L set between the respective semiconductor chips 10 intopieces each including one semiconductor chip 10.

The semiconductor device assembly 3 includes a substrate 30 in which aplurality of the semiconductor chips 10 are formed, a front side resinlayer 11 formed on the front surface 30 a (front surface 10 a of eachsemiconductor chip 10) of the substrate 30 by using a bisphenol-A typeepoxy resin, and a back side resin layer 12 formed to be thinner thanthe front side resin layer 11 on a back surface 30 b of the substrate 30by using polyimideamide.

The front side resin layer 11 and the back side resin layer 12 areformed as follows. That is, when the front side resin layer 11 and theback side resin layer 12 are formed, a bisphenol-A type epoxy resin asthe material of the front side resin layer 11 is applied onto the frontsurface 30 a of the substrate 30. In addition, polyimideamide as thematerial of the backside resin layer 12 is applied onto the back surface30 b of the substrate 30. At this time, polyimideamide is appliedthinner than the bisphenol-A type epoxy resin applied onto the frontsurface 30 a of the substrate 30. Thereafter, these resins are heated toapproximately 170° C. through 180° C. together with the substrate 30,and then cooled to a normal temperature (approximately 25° C.). Thereby,the bisphenol-A type epoxy resin on the front surface 30 a of thesubstrate 30 and polyimideamide on the back surface 30 b of thesubstrate 30 become cured, and a front side resin layer 11 and a backside resin layer 12 are formed on the front surface 30 a and the backsurface 30 b of the substrate 30, respectively.

In cooling for forming the front side resin layer 11 and the back sideresin layer 12 after heating, the bisphenol-A type epoxy resin appliedonto the front surface 30 a of the substrate 30 thermally shrinks, andpolyimideamide applied onto the back surface 30 b of the substrate 30thermally shrinks. On the back surface 30 b of the substrate 30,polyimideamide is applied thinner than the bisphenol-A type epoxy resinon the front surface 30 a of the substrate 30. However, polyimideamidehas a thermal expansion coefficient higher than that of the bisphenol-Atype epoxy resin, so that to the back surface 30 b of the substrate 30,a stress on generally the same level as that of a stress applied to thefront surface 30 a of the substrate 30 from the bisphenol-A type epoxyresin is applied from polyimideamide. Therefore, there is no risk thatthe substrate 30 warps.

By forming the back side resin layer 12 to be thinner than the frontside resin layer 11, the thickness of the semiconductor device 1obtained by cutting the semiconductor device assembly 3 can be madesmaller than in the case where resin layers with the same thickness areformed on the front surface 30 a side and the back surface 30 b side ofthe substrate 30.

Furthermore, a resin material having a small elasticity modulus is usedas the material of the back side resin layer 12, so that although theback side resin layer 12 is formed to be thin, an impact to be appliedto the back side resin layer 12 can be sufficiently absorbed. Therefore,each semiconductor chip 10 can be sufficiently protected in the state ofthe semiconductor device assembly 3. In the semiconductor device 1obtained from the semiconductor device assembly 3, the semiconductorchip 10 can be sufficiently protected.

Although the bisphenol-A type epoxy resin is used as an example of thefirst resin material and polyimideamide is used as an example of thesecond resin material, materials other than the materials used as theexamples may be used as the first resin material and the second resinmaterial as long as the thermal expansion coefficient of the secondresin is higher than that of the first resin material and the elasticitymodulus of the second resin material is smaller than that of the firstresin material.

FIG. 4 is a side view schematically showing a construction of asemiconductor device according to a second embodiment of the presentinvention. FIG. 5 is a perspective view of the semiconductor device.

This semiconductor device 101 is a semiconductor device employing aWL-CSP (Wafer Level-Chip Size Package). The semiconductor device 101includes a semiconductor chip 110.

The semiconductor chip 110 has a thickness of, for example, 300 to 400μm. In the surface layer portion of this semiconductor chip 110,function elements (not shown) are formed. A front surface 110 a of thesemiconductor chip 110 is covered by a passivation film (not shown). Onthe passivation film, a polyimide layer and rewiring (not shown) areformed. On the front surface 110 a of the semiconductor chip 110, afront side resin layer 111 for sealing the rewiring, etc., is formed.This front side resin layer 111 has a thickness of, for example, 40 to100 μm.

On the front side resin layer 111, a plurality of external terminals 115for connection to a mounting substrate 102 are provided. The pluralityof external terminals 115 are arranged in a lattice pattern at thecentral portion of the front side resin layer 111 side. Each externalterminal 115 is formed in a ball shape, and electrically connected tothe semiconductor chip 110 of the semiconductor device 101. In thissemiconductor device 101, mounting on the mounting substrate 102 isrealized by bringing the respective external terminals 115 into contactwith respective lands 121 on the mounting substrate 102.

On the other hand, on a back surface 110 b of the semiconductor chip110, a back side resin layer 112 for protecting the back surface 110 band preventing warping of the semiconductor chip 110 is formed. Thisback side resin layer 112 has a thickness of, for example, 10 to 20 μm.

As the resin material forming the back side resin layer 112, a materialobtained by mixing filler 113 in a range not less than 5 weight percentand not more than 10 weight percent in a resin 116 such as an epoxyresin is used. The filler 113 is, for example, silica particles, and aparticle size thereof is 2 μm on average and not more than 10 μm at amaximum.

On a surface 112 a of the back side resin layer 112, as shown in FIG. 5,the manufacturer name and product number, etc., are marked.

FIG. 6 is a side view showing the surface 112 a of the back side resinlayer 112 in an enlarged manner for describing a method for marking amanufacturer name, etc., on the surface 112 a of the back side resinlayer 112 shown in FIG. 4.

The manufacturer name, etc., is engraved on the surface 112 a of theback side resin layer 112 by laser machining. That is, the surface 112 aof the back side resin layer 112 is irradiated with a laser beam L tochip the resin from the irradiated surface portion and form fine concavegrooves 114, thereby the manufacturer name, etc., is engraved.

As in this semiconductor device 101, by forming the back side resinlayer 112 with a resin material containing the filler 113 mixed in arange not less than 5 weight percent and not more than 10 weight percentin the resin 116, the surface 112 a of the back side resin layer 112 canbe prevented from becoming greatly uneven due to the filler 113 whilethe luster on the surface 112 a of the back side resin layer 112 can bereduced. Therefore, the concave grooves 114 formed by irradiation of thelaser beam L can be easily distinguished, and the visibility can beimproved.

As an example of the semiconductor device 101, a semiconductor deviceemploying a WL-CSP has been shown. However, the present invention is notlimited to the semiconductor device employing the WL-CSP, and is alsowidely applicable to semiconductor devices which have aback side resinlayer on the back surface of the semiconductor chip and include amanufacturer name and a product number, etc., marked on the back sideresin layer.

Moreover, various design changes can be made within the scope of thematters described in the Claims. That is, the above-describedembodiments are only specific examples used for clarifying technicalcontents of the present invention, and the present invention should notbe interpreted limitedly to these specific examples, and the spirit andscope of the present invention are limited only by the accompanyingClaims.

1. A semiconductor device comprising: a semiconductor chip, a functionelement being formed on a side corresponding to a front surface of thesemiconductor chip; a front side resin layer formed on the front surfaceof the semiconductor chip; a back side resin layer formed on a backsurface of the semiconductor chip, the back side resin layer beingformed to be thinner than the front side resin layer, wherein a grooveis formed on the back side resin layer, and a plurality of externalterminals are formed on the front side resin layer.
 2. The semiconductordevice according to claim 1, wherein the semiconductor chip has athickness of 300 to 400 μm.
 3. The semiconductor device according toclaim 1, wherein a passivation film is formed on the front surface ofthe semiconductor chip.
 4. The semiconductor device according to claim3, wherein a polyimide layer is formed on the passivation film.
 5. Thesemiconductor device according to claim 3, wherein rewiring is formed onthe passivation film.
 6. The semiconductor device according to claim 1,wherein the front side resin layer has a thickness of 40 to 100 μm. 7.The semiconductor device according to claim 1, wherein the externalterminals are arranged in a lattice pattern.
 8. The semiconductor deviceaccording to claim 1, wherein each external terminal is formed in a ballshape.
 9. The semiconductor device according to claim 1, wherein theback side resin layer has a thickness of 10 to 20 μm.
 10. Thesemiconductor device according to claim 1, wherein the back side resinlayer includes epoxy resin.
 11. The semiconductor device according toclaim 1, wherein the back side resin layer includes filler.
 12. Thesemiconductor device according to claim 11, wherein content of thefiller in the back side resin layer is in a range not less than 5 weightpercent and not more than 10 weight percent.
 13. The semiconductordevice according to claim 11, wherein the filler includes silicaparticles.
 14. The semiconductor device according to claim 13, wherein aparticle size of the silica particle is not more than 10 μm at amaximum.
 15. The semiconductor device according to claim 1, wherein thegroove does not reach to the semiconductor chip.
 16. A semiconductordevice comprising: a semiconductor chip, a function element being formedon a side corresponding to a front surface of the semiconductor chip; afront side resin layer formed on the front surface of the semiconductorchip; a back side resin layer formed on a back surface of thesemiconductor chip, the back side resin layer being formed to be thinnerthan the front side resin layer, wherein a groove which does not reachto the semiconductor chip is formed on the back side resin layer, and aplurality of external terminals are formed on the front side resinlayer, the external terminals being arranged in a lattice pattern, eachexternal terminal being formed in a ball shape.
 17. The semiconductordevice according to claim 16, wherein the semiconductor chip has athickness of 300 to 400 μm.
 18. The semiconductor device according toclaim 16, wherein a passivation film is formed on the front surface ofthe semiconductor chip.
 19. The semiconductor device according to claim18, wherein a polyimide layer is formed on the passivation film.
 20. Thesemiconductor device according to claim 18, wherein rewiring is formedon the passivation film.
 21. The semiconductor device according to claim16, wherein the front side resin layer has a thickness of 40 to 100 μm.22. The semiconductor device according to claim 16, wherein the backside resin layer has a thickness of 10 to 20 μm.
 23. The semiconductordevice according to claim 16, wherein the back side resin layer includesepoxy resin.
 24. The semiconductor device according to claim 16, whereinthe back side resin layer includes filler.
 25. The semiconductor deviceaccording to claim 24, wherein content of the filler in the back sideresin layer is in a range not less than 5 weight percent and not morethan 10 weight percent.
 26. The semiconductor device according to claim24, wherein the filler includes silica particles.
 27. The semiconductordevice according to claim 26, wherein a particle size of the silicaparticle is not more than 10 μm at a maximum.
 28. The semiconductordevice according to claim 16, wherein the back side resin layer has ahigher thermal expansion coefficient than that of the front side resinlayer.
 29. The semiconductor device according to claim 16, wherein theback side resin layer has a smaller elasticity modulus than that of thefront side resin layer.